elektronische bauelemente MMBT491 npn silicon general purpose transistor 01-june-2002 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features low equivalent on-resistance marking: 491 absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current -continuous i c 1 a collector power dissipation p c 500 mw junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics at ta = 25 c parameter symbol min. max. unit test conditions collector-base breakdown voltage v (br)cbo 80 - v i c =100 a,i e =0 collector-emitter breakdown voltage v (br)ceo 1 60 - v i c =10ma,i b =0 emitter-base breakdown voltage v (br)ebo 5 - v i e =100 a,i c =0 collector cut-off current i cbo - 0.1 a v cb =60v, i e =0 emitter cut-off current i ebo - 0.1 a v eb =4v, i c =0 h fe(1) 100 - v ce =5v,i c =1ma h fe(2) 1 100 300 v ce =5v,i c =500ma h fe(3) 1 80 - v ce =5v,i c =1a dc current gain h fe(4) 1 30 - v ce =5v,i c =2a v ce(sat)1 1 - 0.25 v i c =500ma, i b =50ma collector-emitter saturation voltage v ce(sat)2 1 - 0.5 v i c =1a, i b =100ma v be(sat) 1 - 1.1 v i c =1a, i b =100ma base-emitter saturation voltage v be 1 - 1 v i c =1a, v ce =5v transition frequency f t 150 mhz v ce = 10v, i c = 50ma, f = 100mhz output capacitance c ob - 10 pf v cb = 10v, f = 1.0mhz, i e = 0 note: 1. measured under pulsed conditions, pulse width = 300 s, duty cycle 2%. collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3
elektronische bauelemente MMBT491 npn silicon general purpose transistor 01-june-2002 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves 10a 1a 10ma 100ma 1ma v ce(sat ) vs i c i c - collector current i c -collector current v be(sat ) vs i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe vs i c i c -c ollector current 1ma 100ma 10ma 10a 1a 100 0 300 200 400 10ma 1ma i c - collector current v be(on) vs i c 100ma 1a 10a 0.6 0.8 1.0 1.2 0.4 0.2 0 i c -collector current v ce(sat ) vs i c 1ma 0 0.1 100ma 10ma 0.2 0.3 0.4 0.5 10a 1a 10 1 0.1 safe operat ing area v c e - c ollector emitter voltage (v) 0.1v 10v 100 v 1v 0 1ma 0.01 0.6 0.1 0.2 0.3 0.4 0.5 0.6 i c / i b = 10 + 25 c i c / i b = 50 i c / i b = 10 i c / i b = 10 - 55 c + 25 c + 100 c - 55 c + 25 c + 100 c - 55 c + 25 c + 100 c + 25 c - 55 c + 100 c v ce = 5 v v ce = 5 v dc 1 s 100 ms 10 ms 1 ms 100 s
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